Aluminum Nitride Substrate – Ultimate Solution for High Thermal Conductivity and Electrical Insulation

Aluminum Nitride (AlN) is an ideal material for power circuits due to its extremely high thermal conductivity (170-230W/mK) and good insulating properties. Furthermore, AlN shares similar coefficients of expansion with silicon for optimal compatibility when temperatures shift.

As it comes straight out of sintering, this material can be used as-is in its green or biscuit state or it can be precision machined afterward to meet specific dimensional requirements. Mechanical dicing, laser scribing and cutting as well as thick film hybrid metallizing processes are compatible.

Excellent Insulation

Aluminum Nitride offers exceptional thermal conductivity and electrical insulation properties, making it an excellent heat dissipation substrate for power semiconductors and optical communication lasers in 5G networks. Aluminum Nitride may also serve as an economical replacement for beryllium oxide when machined as it does not release harmful fumes when milled.

Due to its hexagonal wurtzite crystal structure and covalent bonding between aluminum and nitrogen atoms, aluminum nitride can be produced via various techniques; direct nitridation involves reacting aluminum with nitrogen gas; while carbothermal reduction uses alumina as the starting material to produce aluminum nitride.

Aluminum Nitride substrates boasting thermal conductivities of 170W/mk are an ideal choice for large integrated circuits and power modules, dissipating heat more rapidly while cooling off circuits faster. Furthermore, AlN ceramic has similar coefficient of expansion as silicon so its reliability will not suffer under extreme temperature changes.

High Thermal Conductivity

Aluminum Nitride is the only technical ceramic material to offer both high thermal conductivity and electrical insulation, making it the ideal material for many electronic devices and power modules.

Aluminum nitride provides an ideal way of dissipating heat quickly in electrical systems, making them safer. Aluminum nitride provides uniform heat dispersal across a surface area; making it the ideal material choice.

AlN is distinguished from other standard substrate materials by its combination of thermal conductivity and electrical resistance, setting it apart from aluminum oxide and zirconia-toughened alumina (ZTA). Due to its superior mechanical strength, excellent coefficient of thermal expansion match to silicon, and high thermal conductivity characteristics, AlN has quickly become one of the go-to choices for insulating substrates.

Based on your application, machinable AlN can be utilized in its green, biscuit, or fully dense state depending on its use. Green/biscuit machining enables complex geometries while sintering produces dense parts with tight tolerances. For an economical option, AlN may be combined with Shapal Hi M Soft or boron nitride to offer both thermal conductivity and electrical insulation properties simultaneously.

Low Expansion Coefficient

Aluminum nitride is an extremely stable material with exceptional chemical corrosion resistance, being capable of withstanding most inorganic acids and alkalis as well as most molten salts. Furthermore, its non-oxidation characteristic means it will not rust or degrade in prolonged exposure to UV radiation.

Direct nitridation is the predominant technique employed for producing aluminum nitride PCB substrates. The process starts by heating an aluminum source to high temperatures in an atmospherically controlled chamber, turning it into the desired material before cooling and solidifying afterwards.

Standard substrates offer room temperature thermal conductivities of over 170 W/mdegK; using special processing methods can yield even higher material properties and mechanical strengths.

Low coefficient of expansion materials ensure optimal long-term thermal and mechanical performance, making them an important feature in advanced power devices such as RF components and VLSI multichip modules. They can improve lifecycle reliability of chips while decreasing packaging costs.

Excellent Electrical Insulation

Aluminum Nitride (AlN) is an advanced ceramic material with exceptional properties, making it an ideal substrate for high power electronic applications. AlN offers superior electrical insulation properties to enable effective dissipation of heat within semiconductor devices, thus prolonging their lifespan and reliability.

Aluminum Nitride’s hexagonal Wurtzite crystal structure facilitates covalent bonds between aluminum and nitrogen atoms that lead to its superior thermal conductivity. To reach such results, careful preparation techniques such as direct nitridation, carbothermal reduction, chemical vapor deposition are used resulting in material with unparalleled purity and tailored properties – these techniques include direct nitridation, carbothermal reduction and chemical vapor deposition.

MARUWA’s sintered AlN offers excellent thermal conductivity (180-230W/mK), electric insulation, and an expansion coefficient that rivals that of silicon, making it suitable as an effective heat dissipation substrate for LED packages, power modules and wafer bonding processes as well as providing resistance against UV radiation.