Achieve Superior Electrical Performance With Aluminum Nitride Substrates
Aluminum nitride substrates’ unique properties make them the ideal material for high-powered electronic components in harsh environments, including optimal thermal conductivity, insulation and low coefficient of expansion to minimize signal distortion and performance loss.
Aluminum nitride substrate markets have seen explosive growth due to technological innovations like advanced production techniques, expansion into electric vehicles and integration with 5G networks. To ensure maximum performance from your aluminum nitride substrate selections, take care to consider multiple factors when selecting them.
High Thermal Conductivity
Aluminum nitride’s superior thermal conductivity enables it to effectively dissipate heat generated by power semiconductor devices and electronic components, helping prevent overheating while prolonging lifespan and performance. Plus, its non-toxic composition means it can safely be utilized across a range of applications including medical devices and operating theatres.
Aluminum nitride not only has outstanding thermal conductivity, but is also an exceptional electrical insulator. This material can be formed into various shapes and dimensions to fit a range of complex circuits and devices, or combined with other materials, like boron nitride or Shapal Hi-M Soft to form potting compounds with even higher thermal conductivity.
AlN is also ideal for use as a substrate in electronic devices that require hermetic seals, due to its durability in harsh and abrasive environments, high temperatures and temperature cycling, vibration and shock, vibration damping requirements and limited height requirements. Fabricating AlN to meet such restrictions makes this material suitable for many different electronic device applications.
High Thermal Shock Resistance
Thermal shock resistance helps safeguard components against electrical strain that could short circuit them and overheating, both of which can damage internal circuitry and reduce performance.
Aluminum nitride stands up well in harsh environments that other PCB substrates cannot. It withstands acids, strong alkalis, water and other liquids without dissolving, making it perfect for applications involving power electronics or 5G technologies integration which require hermetic seals.
HM’s premium aluminum nitride (AlN) ceramic substrate offers superior flexural strength, with thermal expansion coefficients similar to silicon (Si). This helps eliminate mechanical stresses between components and the substrate during thermal cycling and helps ensure reduced mechanical stresses between them and the substrate.
Insulating properties make polycarbonate an ideal substrate for film bulk acoustic wave resonators, with moderate electromechanical coupling constant and wide band gap to facilitate signal propagation and resonance behavior. Furthermore, its excellent chemical stability and thermal conductivity makes this material extremely desirable for use as film bulk acoustic wave resonators.
Excellent Electrical Insulation
Aluminum nitride substrates combine high thermal conductivity and electrical insulation qualities that are perfect for applications in power semiconductor devices that generate large amounts of heat. Aluminum nitride’s rapid thermal dissipation capabilities help keep these devices functioning effectively while prolonging their lifespan and protecting the device against potential damage.
Insulation properties make the material non-toxic, compatible with most medical grade fluids and capable of withstanding mechanical stresses without damaging internal circuitry. Coupled with its close chemical affinity to silicon (Si), its coefficient of expansion allows heat cycling over time – significantly improving performance reliability and performance.
Isopressed aluminum nitride substrates are available in green, biscuit and fully sintered forms to suit various processes such as mechanical dicing, laser scribing and cutting, thick film hybrid metallizing and direct bond copper processes. Accuratus offers this product in various sizes with tolerances up to 2″ cross sectional diameter by 8″ length as bars, rods or tiles.
Wide Bandgap
Wide bandgap semiconductors offer significant power efficiency gains over silicon-based devices. This is because WBG devices allow energy transfer with much higher frequencies, thus minimizing parasitic effects and creating shorter electrical contact paths.
Aluminum nitride (AlN) ceramic substrates are non-toxic and meet all safety standards for electronics, making them the ideal way to protect the sensitive components in your electronic device. We provide various thicknesses and dimensions of our AlN ceramic substrates as well as different surface finishes so they meet your design requirements perfectly.